Effects of breathing and oblong mode phonons on transport properties in a single-electron transistor.

We investigate theoretically the transport characteristics of a single-electron transistor affected by the dynamic deformation of the device configuration due to phonons. By considering changes in capacitances and tunnel resistances caused by the breathing and oblong vibrations of the island that forms part of the transistor, we formulate the electron-phonon interaction peculiar to the device and derive its transport properties by means of the master equation. For a single electron transistor with a gold nanoparticle island of radius 1 nm, we demonstrate the contribution to the transport properties that originates from tunneling channels associated with THz phonon emission and absorption.